Filtro de Paso Bajo con Amplificador Operacional

El diseño de amplificador diferencial le ayuda a analizar señales

R1	(KΩ)
R2	(KΩ)
R_C(Collector resistor)	(KΩ)
R_E(Emitter resistor)	(KΩ)
VP(Supply Voltage)	(V)
Beta (DC Current Gain)
V_BE(Base to emitter drop)	(V)
R_s(Source Resistance)	(Ω)
R_L(Load resistor)	(Ω)
f_T(Current Gain BW Product)	(MHz)
C_CB(Cu Collector-Base Cap.)	(pF)
C_BE(C_π, Base-Emitter Cap.)	(pF)

V_C(Collector Voltage)	(V)
V_E(Emitter Voltage)	(V)
V_B (Base Voltage)	(V)
I_E(Emitter Voltage)	(mA)
I_C(Collector Voltage)	(mA)
I_B (Base Voltage)	(mA)
g_m(Transconductance)
r_π (Input Resistance of BJT at low freq)	(Ω)
r_e	(Ω)
R_IN (Input Resistance of Amp)	(KΩ)

A (Amplifier Voltage Gain)
f_P1	(MHz)
f_P2	(MHz)

V_B= VP*R2/(R1+R2)

V_E= V_B-V_BE

I_E=V_E/R_E

Alpha= Beta/(Beta+1);

I_C=Alpha*I_E

V_C= VP - I_C*R_C/2

I_B=I_C/Beta

g_m= Ic/25mA

r_e= Alpha/g_m

r_π= Beta/g_m

A=Alpha* r_π*R_C/(R_s+2*r_π)/r_e

f_P1=1/(2*π*(R_s||2*r_π)*(C_BE/2+C_BC))

f_P2=1/(2*π*R_C*C_BC)

f_T= g_m/(2π*(C_BE+C_BC))

The lower pole is dominate:

función Geometría sólida geometria plana